考慮驅(qū)動(dòng)電壓與開(kāi)關(guān)時(shí)序協(xié)同調(diào)控的Si/SiC混合器件開(kāi)關(guān)策略
摘要: 硅基(Si)絕緣柵雙極晶體管(insulated gate bipolar transistor,IGBT)和碳化硅基(SiC)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管(metal oxide semiconductor field effect transistor,MOSFET)并聯(lián)組成的Si/SiC混合器件,已被證實(shí)具有SiC MOSFET的高開(kāi)關(guān)頻率、低開(kāi)關(guān)損耗特性和Si IGBT... (共12頁(yè))
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